Electro-optical device and electronic device

ABSTRACT

An electro-optical device may include a first substrate, a second substrate, a seal member extending in a first direction and disposed between the first and second substrates in a seal region defined around a pixel area, a first conductive layer disposed between the first substrate and the seal member and extending in a second direction intersecting with the first direction, a second conductive layer disposed between the first substrate and the first conductive layer and extending in the second direction, a third layer disposed in the pixel area and formed of the first conductive layer, and a fourth layer disposed in the pixel area and formed of the second conductive layer. In plan view, the first conductive layer overlaps the second conductive layer in the seal region. In a cross-sectional view the first direction, the second conductive layer is larger in an outer shape than the first conductive layer.

CROSS-REFERENCE

The present application is a continuation of U.S. patent applicationSer. No. 15/607,578 filed on May 29, 2017, which is a divisional of U.S.patent application Ser. No. 14/841,893 filed Sep. 1, 2015 (now U.S. Pat.No. 9,696,593), which is a continuation of U.S. patent application Ser.No. 14/543,697 filed on Nov. 17, 2014 (now U.S. Pat. No. 9,151,991),which is a divisional application of U.S. patent application Ser. No.14/150,608 filed on Jan. 8, 2014 (now U.S. Pat. No. 8,917,373), which isa continuation of U.S. patent application Ser. No. 13/038,744 filed onMar. 2, 2011 (now U.S. Pat. No. 8,654,283), which claims priority fromJapanese Patent Application No. 2010-055459 filed on Mar. 12, 2010,which are all hereby incorporated by reference in their entirety.

BACKGROUND 1. Technical Field

The present invention relates to an electro-optical device such as aliquid crystal device, and to an electronic device with theelectro-optical device, for example, a liquid crystal projector.

2. Related Art

Examples of the electro-optical device include a liquid crystal panel inwhich a liquid crystal, an example of an electro-optical material, isinterposed between a pair of substrates. The pair of substrates isbonded together with a UV-curable seal member therebetween. For example,JP-A-2009-63687 discloses that irradiating the liquid crystal panel withUV light from both sides (front face and back face) of the panelfacilitates quick and effective curing of the seal member.

In the case of irradiating the liquid crystal panel with UV light fromboth sides, the UV light is transmitted through openings defined byregions on the substrate where elements and interconnects are providedand which hence have a light shielding effect, before reaching the sealmember. In electro-optical devices such as liquid crystal panels,elements and interconnects are now being formed on substrates in anincreasingly high level of integration. Accordingly, the proportion ofopenings in the substrates through which UV light can be transmitted isdecreasing, resulting in a technical challenge that a seal member cannotbe irradiated with a sufficient amount of UV light.

SUMMARY

An advantage of some aspects of the invention is that an electro-opticaldevice and an electronic device are provided that achieve both a highlevel of integration of a layered structure and efficient curing processof a seal member, thereby realizing high-quality image displayperformance.

In one aspect, the invention provides an electro-optical device thatincludes a pair of substrates bonded together with a photo-curable sealmember disposed in a seal region formed around a pixel area where aplurality of pixels are aligned, the electro-optical device including: aplurality of light-shielding layers formed on one of the pair ofsubstrates in a region corresponding to the seal region so as to overlapwith each other via an interlayer dielectric in plan view from above theone of the substrates; wherein one of the plurality of light-shieldinglayers is larger in outer shape than another light-shielding layerformed at a level higher than the one of the light-shielding layer, inplan view from above the one of the substrates.

Thus, the electro-optical device includes the pair of substrates bondedtogether via a photo-curable seal member such as a UV-curable resindisposed in the seal region formed around the pixel area where theplurality of pixels are aligned.

In the seal region, the plurality of light-shielding layers are providedso as to overlap with each other via the interlayer dielectric. Astructure of the light-shielding layer is not specifically limited, aslong as it is a layered structure lower in light transmittance than theinterlayer dielectric, and may be constituted, for example, by aconductive material or an insulating material. Specific examples of thelight-shielding layer include a data line, a scanning line, a shieldedinterconnect for blocking an electric field generated between conductivelayers, a capacitance interconnect constituting a storage capacitor forimproving a retention characteristic of pixels, a power supply line forsupplying a predetermined potential, and elements and interconnectsincluding dummy interconnects thereof.

In the electro-optical device, in particular, one of the plurality oflight-shielding layers is made larger in outer shape than anotherlight-shielding layer formed at a level higher than the formerlight-shielding layer. In other words, an upper one of the plurality oflight-shielding layers is smaller in area than a lower one. Forming thusthe light-shielding layers prevents UV light for curing the seal memberfrom being blocked by the upper-level light-shielding layers when thesubstrate is irradiated with the UV light from the back side thereof,although the UV is blocked by a lowermost light-shielding layer.

It is to be noted that forming the plurality of light-shielding layersoverlapping with each other ideally in a completely identical outershape would prevent UV light from being blocked by the light-shieldinglayer formed at an upper level. It is not, however, realistic to expectthat the plurality of light-shielding layers can be formed in acompletely identical outer shape, in view of the current patterningaccuracy in forming the light-shielding layers. In the foregoingelectro-optical device, UV light can be prevented from being blocked bythe light-shielding layers of an upper level, by intentionally formingthe upper-level light-shielding layers in a narrower outer shape than alower one.

Each of the plurality of light-shielding layers includes openingsprovided so that light incident from an opposite side of the face of thesubstrate on which the plurality of light-shielding layers are provided(for example, the UV light for curing the seal member) can reach theseal member.

Preferably, the opening may be formed such that the proportion of apredetermined area of the seal region that the opening accounts for isuniform throughout the entirety of the seal region. Here, the expression“uniform” does not require that the proportion becomes exactly the same,but it suffices that the proportion of the opening become approximate toeach other, in a plurality of regions having the same area in the sealregion. Forming thus the openings allows the seal member provided in theseal region to be irradiated with the curing UV light with a uniformintensity, and to be thereby uniformly cured. Such an arrangementsuppresses distortion between the pair of substrates and intrusion ofmoisture, thus contributing to achieving a high-quality electro-opticaldevice.

The plurality of light-shielding layers may include a conductive layerthat constitutes at least a part of interconnects, electrodes, andelectronic elements for performing electro-optical operation. Theconductive layer may be constituted, for example, by a conductivematerial or an insulating material, and specific examples include a dataline, a scanning line, a shielded interconnect for blocking an electricfield generated between the conductive layers, a capacitanceinterconnect constituting a storage capacitor for improving a retentioncharacteristic of pixels, a power supply line for supplying apredetermined potential, and elements and interconnects including dummyinterconnects thereof.

The plurality of light-shielding layers may also include dummyinterconnects formed from the same film as reflective pixel electrodesprovided in the form of islands for the pixels in the pixel area. Here,“the same film” refers to a film formed using the same depositionprocess, and does not necessarily mean that the pixel electrode and aconnection line are formed of a completely identical film. It is notmandatory that the pixel electrode and the connection line areelectrically connected to each other, or the same in thickness or otherconfiguration. In this case, the dummy interconnect may be formed of alight-reflective material such as aluminum, as the pixel electrode. Inthe case where the reflective light-shielding layer is irradiated withUV light, the UV light is reflected and often provokes damage oralteration of the peripheral interconnects and elements. In the case ofthe electro-optical device according to the invention, in contrast,since the upper-level light-shielding layers are kept from beingirradiated with UV light, such damage or alteration can be effectivelyprevented.

Thus, the electro-optical device allows the seal member to beefficiently cured even through a highly integrated layered structure,thereby providing high-quality image display performance.

In another aspect, the invention provides an electronic device includingthe foregoing electro-optical device. Accordingly, an electronic devicecapable of displaying a high-quality image can be obtained, examples ofwhich include a projector, a TV set, a mobile phone, an electronicorganizer, a portable audio player, a word processor, a digital camera,a video recorder with viewfinder or direct-view monitor, a work station,a videophone, a POS terminal, and a touch panel.

The above and other features and advantages of the invention will becomemore apparent through description of embodiment given hereunderreferring to the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanyingdrawings, wherein like numbers reference like elements.

FIG. 1 is a plan view showing a liquid crystal device according to anembodiment including components formed on a TFT array substrate, viewedfrom the side of a counter substrate.

FIG. 2 is a cross-sectional view taken along a line II-II in FIG. 1.

FIG. 3 is an equivalent circuit diagram of elements and interconnects ina plurality of pixels constituting an image display region of the liquidcrystal device according to the embodiment.

FIG. 4 is an enlarged cross-sectional view showing a structure of theliquid crystal device according to the embodiment.

FIG. 5 is an enlarged cross-sectional view showing a structure of atypical liquid crystal device according to a comparative example.

FIGS. 6A to 6C are cross-sectional views sequentially showing a part ofa method of manufacturing the liquid crystal device according to theembodiment.

FIG. 7 is a plan view showing a projector exemplifying an electronicdevice including the liquid crystal device according to the embodiment.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Electro-optical Device

Referring first to FIGS. 1 and 2, an embodiment of an electro-opticaldevice according to the invention will be described. In this embodiment,the electro-optical device will be exemplified by an active matrixliquid crystal device with a built-in drive circuit.

A general configuration of the liquid crystal device according to thisembodiment will be described, referring to FIGS. 1 and 2. FIG. 1 is aplan view showing the liquid crystal device according to this embodimentincluding components formed on a thin film transistor (hereinafter, TFT)array substrate, viewed from the side of a counter substrate, and FIG. 2is a cross-sectional view taken along a line II-II in FIG. 1.

As shown in FIGS. 1 and 2, the TFT array substrate 10 and the countersubstrate 20 are disposed so as to oppose each other, in the liquidcrystal device according to this embodiment. The TFT array substrate 10and the counter substrate 20 may be, for example, a quartz substrate, aglass substrate, or a silicon substrate, and correspond to the pair ofsubstrates according to the invention.

Between the TFT array substrate 10 and the counter substrate 20, liquidcrystal exemplifying an electro-optical material is enclosed,constituting a liquid crystal layer 50. The TFT array substrate 10 andthe counter substrate 20 are bonded together by means of a sealant 52provided in a seal region formed around a periphery of an image displayregion 10 a. The image display region 10 a is an example of the pixelarea according to the invention, and the sealant 52 is an example of theseal member according to the invention.

The sealant 52 may be constituted by a UV-curable resin that can bondthe substrates together. In a manufacturing process, the sealant 52 isapplied to the TFT array substrate 10 and then irradiated with UV lightto be cured. The manufacturing process will be subsequently described indetail. The sealant 52 may contain a spacer material such as a glassfiber or glass beads scattered therein so as to define a predeterminedgap between the TFT array substrate 10 and the counter substrate 20.

In an outer peripheral region of the seal region where the sealant 52 isprovided, a data line drive circuit 101 and external circuit connectionterminals 102 are provided along a side of the TFT array substrate 10. Asampling circuit 7 is provided in an inner region of the mentioned sideof the seal region. In a frame region formed along two sides of the sealregion adjacent to the first mentioned side, scanning line drivecircuits 104 are provided.

On the TFT array substrate 10, vertical conduction terminals 106 areprovided at positions opposing the four corners of the counter substrate20 so as to connect the substrates using vertical conduction materials107. Thus, electrical connection between the TFT array substrate 10 andthe counter substrate 20 can be achieved. Also, routing interconnects 90are provided for electrical connection among the external circuitconnection terminals 102, the data line drive circuit 101, the scanningline drive circuit 104, and the vertical conduction terminals 106.

Referring to FIG. 2, a layered structure is formed on the TFT arraysubstrate 10. The layered structure includes transistors for pixelswitching, serving as driving elements, and interconnects such asscanning lines and data lines. Although details of the layered structureare not shown in FIG. 2, pixel electrodes 9 a constituted by atransparent material such as Indium Tin Oxide (hereinafter, ITO) areprovided in the form of islands in a predetermined pattern for eachpixel, on the layered structure.

The pixel electrodes 9 a are located in the image display region 10 a onthe TFT array substrate 10, so as to oppose counter electrode 21 to bedescribed later. An alignment layer 16 is provided so as to cover thepixel electrodes 9 a, on a surface of the TFT array substrate 10opposing the liquid crystal layer 50, in other words over the pixelelectrodes 9 a.

On a surface of the counter substrate 20 opposing the TFT arraysubstrate 10, the counter electrode 21 constituted by a transparentmaterial such as ITO is provided so as to oppose the plurality of pixelelectrodes 9 a. Here, a color filter may be provided on the countersubstrate 20 to thereby enable color display in the image display region10 a. An alignment layer 22 is provided over the counter electrode 21,on the counter substrate 20.

On the TFT array substrate 10 shown in FIGS. 1 and 2, precharge circuitsthat each provide a precharge signal of a predetermined voltage to theplurality of data lines in advance of image signals, and inspectioncircuits for inspecting quality and defects of the liquid crystal deviceduring the manufacturing process and before delivery may be provided, inaddition to the data line drive circuit 101, the scanning line drivecircuits 104, and the sampling circuit 7.

Referring now to FIG. 3, an electrical configuration in the imagedisplay region 10 a of the liquid crystal device according to thisembodiment will be described. FIG. 3 is an equivalent circuit diagram ofelements and interconnects in a plurality of pixels aligned in a matrixpattern and constituting the image display region 10 a of the liquidcrystal device according to this embodiment.

As shown in FIG. 3, the pixel electrode 9 a and a TFT 30 are connectedto each of the plurality of pixels aligned in a matrix pattern andconstituting the image display region 10 a. The TFT 30 is electricallyconnected to the pixel electrode 9 a, and performs a switching controlfor the pixel electrode 9 a when the liquid crystal device is activated.Data lines 6 a through which the image signals are provided areelectrically connected to the source of the TFT 30. The image signalsS1, S2, . . . , Sn written in the data lines 6 a may beline-sequentially provided, or provided group by group to a plurality ofdata lines 6 a adjacent to each other.

The scanning lines 11 are electrically connected to the gate of the TFT30, so that the liquid crystal device line-sequentially applies scanningsignals G1, G2, . . . , Gm to the scanning lines 11 in a pulse form andat a predetermined timing. The pixel electrodes 9 a are electricallyconnected to the drain of the TFT 30, so that upon closing the TFT 30serving as a switching element for a predetermined period, the imagesignals S1, S2, . . . , Sn provided through the data lines 6 a arewritten at a predetermined timing. The image signals S1, S2, . . . , Snof a predetermined level written in the liquid crystal through the pixelelectrode 9 a are retained for a predetermined period between the pixelelectrode 9 a and the counter electrode 21 on the counter substrate 20.

The liquid crystal constituting the liquid crystal layer 50 (see FIG. 2)changes the orientation and order of molecules depending on the level ofthe applied voltage, thereby modulating light and enabling gradationdisplay. In a normally white mode, transmittance of incident light isreduced depending on the voltage applied to each pixel, while in anormally black mode the transmittance of incident light is increaseddepending on the voltage applied to each pixel, so that the liquidcrystal device as a whole outputs light that produces a contrastaccording to the image signal.

To prevent leakage of the retained image signal, storage capacitors 70are additionally provided parallel to a liquid crystal capacitanceformed between the pixel electrodes 9 a and the counter electrode 21(see FIG. 2). The storage capacitor 70 is a capacitance element servingas a retention capacitance that temporarily retains a potential of eachpixel electrode 9 a in accordance with the provision of the imagesignal. One of the electrodes of the storage capacitor 70 is connectedto the drain of the TFT 30 parallel to the pixel electrode 9 a, and theother electrode is connected to a capacitance line 300 of a fixedpotential, so as to maintain a constant potential. Providing the storagecapacitors 70 results in improved potential retention characteristic ofthe pixel electrodes 9 a, and improved display characteristic such asimproved contrast and reduced flickering.

Proceeding to FIG. 4, a cross-sectional structure of the electro-opticaldevice according to this embodiment will be described in detail. FIG. 4is an enlarged cross-sectional view showing a structure of theelectro-optical device according to this embodiment.

In the image display region 10 a on the TFT array substrate 10, thescanning lines 11, capacitance electrodes 71 which are one of theelectrodes constituting the storage capacitors 70, light-shielding films15 for blocking light to the TFT 30 for pixel switching, and the pixelelectrodes 9 a are layered in this order from the bottom. Interlayerdielectrics 12 and 13 are provided between those layers, and hence thoselayers are electrically insulated from each other. Although the datalines 6 a, the TFT 30 and so forth are provided in the image displayregion 10 a in addition to the layered structure shown in FIG. 4, thoseare not shown for the sake of convenience of description.

In the seal region 10 b on the TFT array substrate 10, where the sealant52 is provided, dummy interconnects 11′, 71′, 15′ and 9 a′ are provided,which are formed from the same films as those constituting the scanninglines 11, the capacitance electrodes 71, the light-shielding films 15and the pixel electrodes 9 a formed in the image display region 10 a.Here, “the same film” refers to a film formed using the same depositionprocess, and does not necessarily mean that the dummy interconnects areformed of a completely identical film. Also, it is not mandatory thatthe dummy interconnects are electrically connected to each other, orhave the same thickness or configuration. Accordingly, the dummyinterconnects 11′, 71′, 15′ and 9 a′ are constituted by the samematerial as that of the scanning lines 11, the capacitance electrodes71, the light-shielding films 15 and the pixel electrodes 9 a. Forexample, the pixel electrodes 9 a which are reflective are formed oflight-reflective aluminum, and hence the dummy interconnects 9 a′ arealso formed of aluminum. It is to be noted that the dummy interconnects11′, 71′, 15′ and 9 a′ are examples of the light-shielding layeraccording to the invention.

The dummy interconnects 11′, 71′, 15′ and 9 a′ formed in the seal region10 b are formed so as to overlap with each other in plan view from abovethe TFT array substrate 10. In this embodiment, in particular, the dummyinterconnects 11′, 71′, 15′ and 9 a′ are formed such that an upper oneof the dummy interconnects becomes smaller in area (smaller in outershape) than a lower one in plan view from above the TFT array substrate10. Because of the dummy interconnects 11′, 71′, 15′ and 9 a′ thusformed, UV light emitted to the sealant 52 for curing from a back sideof the TFT array substrate 10 (opposite to the face where the pixelelectrodes 9 a and so on are provided) in the process of manufacturingthe liquid crystal device according to this embodiment is blocked onlyby the dummy interconnects 11′ at a lowermost level, and kept from beingblocked by the dummy interconnects 71′, 15′ and 9 a′ formed at higherlevels (see arrows in FIG. 4). Although UV light for curing the sealant52 is also emitted from the side of the counter substrate 20 in themanufacturing process, since only the alignment layer 23 is provided onthe counter substrate 20 in the seal region 10 b, the UV light emittedfrom the side of the counter substrate 20 reaches the sealant 52 withoutbeing blocked. The method of manufacturing the liquid crystal deviceaccording to this embodiment will be subsequently described.

The dummy interconnects 11′ include openings 11 a through which the UVlight can be transmitted, in plan view from a back side of the TFT arraysubstrate 10. The UV light emitted from the side of the TFT arraysubstrate 10 is transmitted through the openings 11 a thereby reachingand curing the sealant 52. Preferably, the openings 11 a may be locatedat appropriate positions so that the sealant 52 is uniformly cured overthe entire seal region 10 b, upon being irradiated with the UV light.For example, the openings 11 a may be formed in a stripe pattern or acheckered pattern in the seal region 10 b, in plan view over the TFTarray substrate 10. In other words, the pattern of the openings 11 a isnot specifically limited, as long as the UV light can be transmitted soas to effectively cure the sealant 52, without compromising the functionof the dummy interconnects 11′. Forming thus the openings 11 a allowsthe sealant 52 provided in the seal region 10 b to be irradiated withthe UV light for curing with a uniform intensity and thus to beuniformly cured, and also effectively prevents intrusion of moisture.Consequently, a high-quality liquid crystal device can be obtained.

Referring now to FIG. 5, a cross-sectional structure of a typical liquidcrystal device according to a comparative example will be described.FIG. 5 is an enlarged cross-sectional view showing a structure of thetypical liquid crystal device according to the comparative example.

In the typical liquid crystal device, the dummy interconnects 11′, 71′,15′ and 9 a′ provided in the seal region 10 b are formed so as to haveirregular outer shapes. Accordingly, UV light emitted from a back sideof the TFT array substrate 10 is, despite being transmitted through thelowermost dummy interconnects 11′, blocked by the dummy interconnects71′, 15′ and 9 a′ of upper levels, and can barely reach the sealant 52(see arrows in FIG. 5).

In the liquid crystal device according to this embodiment, in contrast,UV light can reach the sealant 52 without being blocked by the dummyinterconnects 71′, 15′ and 9 a′ of upper levels, and therefore thesealant 52 can be efficiently cured even in the case where the dummyinterconnects are formed with a high level of integration in the sealregion 10 b. Consequently, an electro-optical device capable ofdisplaying a high-quality image can be obtained.

Method of Manufacturing Electro-Optical Device

Hereafter, an embodiment of a method of manufacturing theelectro-optical device according to the invention will be describedreferring to FIGS. 6A to 6C. FIGS. 6A to 6C are cross-sectional viewssequentially showing a part of the method of manufacturing the liquidcrystal device according to this embodiment.

As shown in FIG. 6A, a substrate 10 constituted by silicon, quartz, orglass, for example, is prepared. It is preferable that the substrate 10is subjected to a pretreatment in an inert gas atmosphere such asnitrogen and at a high temperature as approx. 850 to 1300° C., morepreferably at 1000° C., to thereby minimize distortion through ahigh-temperature process to be subsequently performed.

A metal layer constituted by a light-reflective conductive material suchas aluminum or copper is formed, for example, by a sputtering process,all over the substrate 10 thus pretreated. Then, the scanning lines 11and the dummy interconnects 11′ are formed, for example, by an etchingprocess, in a pattern as shown in FIG. 4.

The interlayer dielectric 12 is formed over the scanning lines 11 andthe dummy interconnects 11′ as shown in FIG. 6B. Then, the scanninglines 11, the capacitance electrodes 71, the light-shielding films 15,and the pixel electrodes 9 a, as well as the dummy interconnects 11′,71′, 15′ and 9 a′ are formed on the TFT array substrate 10, by formingthe insulating layer and the conductive layer in a predetermined patternthrough a process similar to the formation of the scanning lines 11, thedummy interconnects 11′ and the interlayer dielectric 12. Upon formingthe alignment layer 16 over the pixel electrodes 9 a and the dummyinterconnects 9 a′, the layered structure on the TFT array substrate 10can be obtained.

Proceeding to FIG. 6C, the TFT array substrate 10 on which the layeredstructure is now provided is bonded with the separately prepared countersubstrate 20 with the sealant 52 therebetween. An electro-opticalmaterial (not shown) such as liquid crystal is enclosed between the TFTarray substrate 10 and the counter substrate 20. Upon emitting UV lightfrom both sides of the TFT array substrate 10 and the counter substrate20 as indicated by arrows in FIG. 6C, the sealant 52 is cured and theliquid crystal device is completed. In this process, since the UV lightis not blocked by the upper-level light-shielding films on the TFT arraysubstrate 10, namely the dummy interconnects 71′, 15′ and 9 a′ as shownin FIG. 4, the sealant 52 can be efficiently cured.

As described in the above embodiment, the interconnects on the TFT arraysubstrate 10 are arranged such that UV light for curing can effectivelyreach the sealant 52. Such an arrangement of the interconnects providesa liquid crystal device that can display a high-quality image, despitethe requirement for a higher level of integration.

Electronic Device

Referring now to FIG. 7, the case where the foregoing liquid crystaldevice is applied to a projector, an example of an electronic device,will be described. The liquid crystal device is employed as a lightvalve of the projector. FIG. 7 is a plan view showing a configuration ofthe projector.

As shown in FIG. 7, the projector 1100 includes a lamp unit 1102,constituted by a white light source such as a halogen lamp. Projectionlight emitted by the lamp unit 1102 is split into three primary colorsof RGB by four mirrors 1106 and two dichroic mirrors 1108 disposed in alight guide 1104, and incident upon liquid crystal panels 1110R, 1110B,and 1110G respectively serving as a light valve corresponding to eachprimary color.

The liquid crystal panels 1110R, 1110B, and 1110G have the sameconfiguration as that of the foregoing liquid crystal device, and areeach driven by primary color signals of RGB provided by an image signalprocessing circuit. The light modulated by these liquid crystal panelsis incident upon a dichroic prism 1112 from three directions. Light of Rand B is refracted by 90 degrees while light of G proceeds straight,through the dichroic prism 1112. Accordingly, images of the respectivecolors are synthesized, so that a color image is projected on a screenthrough a projection lens 1114.

Regarding the images displayed by the liquid crystal panels 1110R,1110B, and 1110G, it is to be noted that the images displayed by theliquid crystal panels 1110R and 1110B have to be horizontally flippedwith respect to the image displayed by the liquid crystal panel 1110G.

Since the light corresponding to each of the RGB primary colors isincident upon the liquid crystal panels 1110R, 1110B, and 1110G throughthe dichroic mirrors 1108, there is no need to provide a color filter.

The electro-optical device is applicable to various electronic devicesother than the projector shown in FIG. 7, examples of which include amobile PC, a mobile phone, a liquid crystal TV set, a video recorderwith viewfinder or direct-view monitor, a car navigation system, apager, an electronic organizer, a pocket calculator, a word processor, awork station, a videophone, a POS terminal, and a device with a touchpanel.

It is to be understood that the invention is in no way limited to theforegoing embodiments, but may be modified within the scope and spiritof the invention expressed in the entire specification and appendedclaims, and such modified electro-optical device and electronic deviceare also included in the technical scope of the invention.

What is claimed is:
 1. An electro-optical device comprising: a firstsubstrate having transmissivity; a second substrate; a seal memberdisposed between the first substrate and the second substrate so as tobond the first substrate and the second substrate together, the sealmember being disposed in a seal region defined around a pixel area inwhich pixels included in a plurality of pixels are aligned, the sealmember extending in a first direction; a first conductive layer that isdisposed between the first substrate and the seal member and that isdisposed in the seal region, the first conductive layer extending in asecond direction which intersects with the first direction; a secondconductive layer that is disposed between the first substrate and thefirst conductive layer and that is disposed in the seal region, thesecond conductive layer extending in the second direction; a thirdconductive layer disposed in the pixel area, wherein the thirdconductive layer is disposed in a same layer as the first conductivelayer; and a fourth conductive layer disposed in the pixel area, whereinthe fourth conductive layer is disposed in a same layer as the secondconductive layer, wherein: in a plan view, the first conductive layeroverlaps the second conductive layer in the seal region, in across-sectional view along the first direction, the second conductivelayer is larger in an outer shape than the first conductive layer, andin the cross-sectional view, the seal member is larger in an outer shapethan the second conductive layer.
 2. The electro-optical deviceaccording to claim 1, wherein at least one of the first conductive layerand the second conductive layer is an interconnecting layer.
 3. Theelectro-optical device according to claim 1, wherein the firstconductive layer and the second conductive layer are light-shieldinglayers.
 4. The electro-optical device according to claim 1, wherein thefirst conductive layer and the second conductive layer are metal layers.5. The electro-optical device according to claim 1, wherein the firstconductive layer provides a corresponding pattern with the secondconductive layer.
 6. The electro-optical device according to claim 1,wherein the seal member includes a photo curable material.
 7. Theelectro-optical device according to claim 1, wherein the seal memberfurther extends in the second direction.
 8. The electro-optical deviceaccording to claim 1, wherein the second conductive layer is larger inan outer shape than the fourth conductive layer in plan view.
 9. Theelectro-optical device according to claim 1, further comprising: a fifthconductive layer that is disposed in a same layer as the firstconductive layer and that is disposed in the seal region; and a sixthconductive layer that is disposed in a same layer as the secondconductive layer and that is disposed in the seal region, wherein in theplan view, the fifth conductive layer overlaps the sixth conductivelayer in the seal region, in the cross-sectional view along the firstdirection, the sixth conductive layer is larger in an outer shape thanthe fifth conductive layer, and in the cross-sectional view along thefirst direction, the seal member is larger in an outer shape than thesixth conductive layer.
 10. The electro-optical device according toclaim 9, wherein a first interval between the second conductive layerand the sixth conductive layer is narrow than a second interval betweenthe first conductive layer and the fifth conductive layer.
 11. Theelectro-optical device according to claim 1, wherein in the plan view,an outer edge of the second conductive layer and an inner edge of thesecond conductive layer is disposed between an outer edge of the sealmember and an inner edge of the seal member.